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TYPICAL PERFORMANCE CURVES
APT65GP60L2DF2
APT65GP60L2DF2
600V
POWER MOS 7 IGBT
(R)
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
TO-264 Max
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
* 100 kHz operation @ 400V, 54A * 50 kHz operation @ 400V, 76A * SSOA rated
G
C
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current
7
All Ratings: TC = 25C unless otherwise specified.
APT65GP60L2DF2 UNIT
600 20 30
@ TC = 25C Volts
100 96 250 250A@600V 833 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 150C
Safe Switching Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1250A) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 1250
A nA
8-2004 050-7440 Rev C
6 2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2 2
Volts
I CES I GES
5500 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT65GP60L2DF2
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 65A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 65A
4 5
MIN
TYP
MAX
UNIT pF V nC A
7400 580 35 7.5 210 50 65 250 30 55 90 65 605 1410 895 30 55 130 90 605 1925 1470
MIN TYP MAX UNIT C/W gm ns ns
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Safe Switching Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
4 5
R G = 5 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 65A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode)
6
J
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
.15 .67 6.10
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JEDS24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7440
Rev C
8-2004
TYPICAL PERFORMANCE CURVES
100 90
IC, COLLECTOR CURRENT (A)
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
100 90
IC, COLLECTOR CURRENT (A)
APT65GP60L2DF2
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
80 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
80 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC = 65A TJ = 25C
TC=25C TC=125C
TC=-55C
TC=25C TC=125C TC=-55C
FIGURE 1, Output Characteristics(VGE = 15V) 250
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 50 100 150 200 GATE CHARGE (nC) FIGURE 4, Gate Charge 250
IC, COLLECTOR CURRENT (A)
200
VCE=120V VCE=300V
150 TJ = -55C 100 TJ = 25C 50 TJ = 125C 0 0 2 3 45 67 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE=480V
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4 3.5 3 2.5 2 1.5 1 0.5 IC =130A
3 2.5 2 IC = 32.5A 1.5 1 0.5 IC =130A IC = 65A
IC = 65A IC = 32.5A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
0
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 300
0 -50
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
250 200 150 100 50 0 -50
050-7440
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Rev C
8-2004
60
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
160 140 120 100 80 60 40 20 0 VCE = 400V RG = 5 L = 100 H
VGE =15V,TJ=25C VGE =10V,TJ=125C VGE =15V,TJ=125C
APT65GP60L2DF2
50 VGE= 10V 40 VGE= 15V 30 20 10 VCE = 400V TJ = 25C or 125C RG = 5 L = 100 H
VGE =10V,TJ=25C
0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 160 140 120
tr, RISE TIME (ns)
TJ = 25 or 125C,VGE = 10V
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 140 120 100 80 60 40 20
TJ = 25C, VGE = 10V or 15V RG =5, L = 100H, VCE = 400V TJ = 125C, VGE = 10V or 15V
100 80 60 40 20 0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 6000
RG =5, L = 100H, VCE = 400V TJ = 25 or 125C,VGE = 15V
tf, FALL TIME (ns)
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 5000
EOFF, TURN OFF ENERGY LOSS (J)
VCE = 400V L = 100 H RG = 5
0
EON2, TURN ON ENERGY LOSS (J)
5500 5000 4500 4000 3500 3000 2500 2000 1500 1000
VCE = 400V L = 100 H RG = 5
TJ =125C, VGE=15V
4000
TJ = 125C, VGE = 10V or 15V
TJ =125C,VGE=10V
3000
TJ = 25C, VGE=15V
2000
1000
TJ = 25C, VGE = 10V or 15V
500 TJ = 25C, VGE=10V 0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 9000
VCE = 400V VGE = +15V TJ = 125C
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 6000
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V RG = 5
0
SWITCHING ENERGY LOSSES (J)
8000 7000 6000 5000 4000 3000 2000 1000 0 0
Eon2 130A
Eon2 130A Eoff 130A
5000 4000 3000 2000
Eoff 130A Eon2 65A Eon2 32.5A
8-2004
Eon2 65A 1000 Eon2 32.5A 0 -50 Eoff 65A Eoff 32.5A
Rev C
Eoff 65A Eoff32.5A
050-7440
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
10,000 5,000
IC, COLLECTOR CURRENT (A)
300 Cies 250 200 150 100 50 0
APT65GP60L2DF2
C, CAPACITANCE ( F)
1,000 500 Coes
P
100 50 Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0.16 0.14
ZJC, THERMAL IMPEDANCE (C/W)
0.9
0.12 0.7 0.10 0.08 0.06 0.3 0.04 0.02 0 10
-5
0.5 Note:
PDM t1 t2
0.1 0.05 10
-4
SINGLE PULSE
-3 -2
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10 10 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
187
FMAX, OPERATING FREQUENCY (kHz)
RC MODEL Junction temp (C) 0.0683 Power (watts) 0.0822 Case temperature(C) 0.256F 0.0217F
100
50
TJ = 125C TC = 75C D = 50 % VCE = 400V RG = 5
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
10
10 30 50 70 90 110 130 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
8-2004 050-7440 Rev C
TJ - TC R JC
APT65GP60L2DF2
APT30DF60
Gate Voltage TJ = 125 C
V CC
IC
V CE
td(on) tr 90%
A
Collector Current
D.U.T.
5%
10%
5%
Collector Voltage
Figure 21, Inductive Switching Test Circuit
Switching Energy
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage Collector Voltage
VTEST *DRIVER SAME TYPE AS D.U.T.
TJ = 125 C
td(off)
90%
A
tf
V CE 100uH IC V CLAMP
0
B
10% Switching Energy Collector Current
A DRIVER* D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
050-7440
Rev C
8-2004
TYPICAL PERFORMANCE CURVES
APT65GP60L2DF2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 99C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 65A Forward Voltage IF = 130A IF = 65A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT65GP60L2DF2 UNIT Amps
30 49 320
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.82 3.60 2.22
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.70
, THERMAL IMPEDANCE (C/W)
21 60 65 3 115 410 7 49 705 22 -
IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 30A, diF/dt = -200A/s VR = 400V, TC = 125C
IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
0.60 0.50 0.40
0.9
0.7
0.5 0.30 0.20 0.10 0 0.3 SINGLE PULSE Note:
PDM t1 t2
0.1 0.05 10-5 10-4
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
JC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.378 C/W Power (watts) 0.291 C/W Case temperature (C) 0.110 J/C 0.00232 J/C
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7440
Rev C
8-2004
140
trr, REVERSE RECOVERY TIME (ns)
120 60A 100 80 60 40 20 0 30A
APT65GP60L2DF2
TJ = 125C VR = 400V
120
IF, FORWARD CURRENT (A)
100 80 60 40 20 0 TJ = 150C TJ = 125C TJ = 25C TJ = -55C
15A
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage
TJ = 125C VR = 400V
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change 25
IRRM, REVERSE RECOVERY CURRENT (A)
TJ = 125C VR = 400V
900
Qrr, REVERSE RECOVERY CHARGE (nC)
800 700 600 500 400 300 200 100 0
60A
60A 30A
20
15 30A 10 15A 5
15A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 1.4 1.2 1.0 trr 0.8 0.6 0.4 0.2 0.0 IRRM Qrr trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 60 50 40
IF(AV) (A)
Duty cycle = 0.5 TJ = 150C
0
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
30 20 10 0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature 250
CJ, JUNCTION CAPACITANCE (pF)
0
50 75 100 125 150 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature
25
200
150
100
8-2004
50
Rev C
050-7440
10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage
0
1
TYPICAL PERFORMANCE CURVES
Vr +18V 0V D.U.T. 30H diF /dt Adjust
APT6017LLL
APT65GP60L2DF2
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 33. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 34, Diode Reverse Recovery Waveform and Definitions
TO-264 MAXTM(L2) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807)
5.79 (.228) 6.20 (.244)
Collector (Cathode)
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
Gate
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7440
Rev C
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
8-2004
Collector (Cathode) Emitter (Anode)

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